The potential of textured front ZnO and flat TCO/metal back contact to improve optical absorption in thin Cu(In, Ga)Se2 solar cells
Identifieur interne : 006E64 ( Main/Repository ); précédent : 006E63; suivant : 006E65The potential of textured front ZnO and flat TCO/metal back contact to improve optical absorption in thin Cu(In, Ga)Se2 solar cells
Auteurs : RBID : Pascal:07-0411320Descripteurs français
- Pascal (Inist)
- Absorption optique, Spectre absorption, Cellule solaire, Simulation numérique, Diffusion lumière, Facteur réflexion, Spectre réflexion, Rendement quantique, Propriété optique, Argent, Modélisation, Etude théorique, Zinc oxyde, Cuivre séléniure, Gallium séléniure, Indium séléniure, Molybdène, ZnO, 7866, 8460J.
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Abstract
The role of additionally textured front transparent conductive oxide - TCO (ZnO:Al) and flat TCO/metal contact on optical improvements in thin Cu(In,Ga)Se2 (CIGS) solar cells are investigated by means of numerical simulations. A de-coupled analysis of two effects related to additional texturing of front surface of ZnO:Al TCO - (i) enhancement of light scattering and (ii) decreased total reflectance (antireflective effect) - reveals that the improvements in quantum efficiency, QE, and short-circuit current, JSC, of the solar cell originate from an antireflective effect only. In order to improve optical properties of the back contact the introduction of a TCO layer (undoped ZnO) between CIGS and back metal contact is investigated from the optical point of view. In addition to ZnO/Mo, a highly reflective ZnO/Ag contact (ZnO is also assumed to work as a protection layer for Ag) is also included in simulations. Results show significant increase in reflectance related to introduced ZnO in front of Mo. Drastically increased reflectance is obtained if ZnO/Mo is substituted with ZnO/Ag. The improvements in QE and JSC of a thin CIGS solar cell, related to ZnO/metal contacts are presented.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The potential of textured front ZnO and flat TCO/metal back contact to improve optical absorption in thin Cu(In, Ga)Se<sub>2</sub> solar cells</title><author><name sortKey="Campa, A" uniqKey="Campa A">A. Campa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Krc, J" uniqKey="Krc J">J. Krc</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Malmstrom, J" uniqKey="Malmstrom J">J. Malmström</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Uppsala University, Angstrom Solar Center, P.O. Box 534</s1><s2>75120 Uppsala</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>75120 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Edoff, M" uniqKey="Edoff M">M. Edoff</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Uppsala University, Angstrom Solar Center, P.O. Box 534</s1><s2>75120 Uppsala</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>75120 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Smole, F" uniqKey="Smole F">F. Smole</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Topic, M" uniqKey="Topic M">M. Topic</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0411320</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0411320 INIST</idno><idno type="RBID">Pascal:07-0411320</idno><idno type="wicri:Area/Main/Corpus">007537</idno><idno type="wicri:Area/Main/Repository">006E64</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Copper selenides</term><term>Digital simulation</term><term>Gallium selenides</term><term>Indium selenides</term><term>Light scattering</term><term>Modelling</term><term>Molybdenum</term><term>Optical absorption</term><term>Optical properties</term><term>Quantum yield</term><term>Reflection spectrum</term><term>Reflectivity</term><term>Silver</term><term>Solar cells</term><term>Theoretical study</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Absorption optique</term><term>Spectre absorption</term><term>Cellule solaire</term><term>Simulation numérique</term><term>Diffusion lumière</term><term>Facteur réflexion</term><term>Spectre réflexion</term><term>Rendement quantique</term><term>Propriété optique</term><term>Argent</term><term>Modélisation</term><term>Etude théorique</term><term>Zinc oxyde</term><term>Cuivre séléniure</term><term>Gallium séléniure</term><term>Indium séléniure</term><term>Molybdène</term><term>ZnO</term><term>7866</term><term>8460J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The role of additionally textured front transparent conductive oxide - TCO (ZnO:Al) and flat TCO/metal contact on optical improvements in thin Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells are investigated by means of numerical simulations. A de-coupled analysis of two effects related to additional texturing of front surface of ZnO:Al TCO - (i) enhancement of light scattering and (ii) decreased total reflectance (antireflective effect) - reveals that the improvements in quantum efficiency, QE, and short-circuit current, J<sub>SC</sub>, of the solar cell originate from an antireflective effect only. In order to improve optical properties of the back contact the introduction of a TCO layer (undoped ZnO) between CIGS and back metal contact is investigated from the optical point of view. In addition to ZnO/Mo, a highly reflective ZnO/Ag contact (ZnO is also assumed to work as a protection layer for Ag) is also included in simulations. Results show significant increase in reflectance related to introduced ZnO in front of Mo. Drastically increased reflectance is obtained if ZnO/Mo is substituted with ZnO/Ag. The improvements in QE and J<sub>SC</sub> of a thin CIGS solar cell, related to ZnO/metal contacts are presented.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The potential of textured front ZnO and flat TCO/metal back contact to improve optical absorption in thin Cu(In, Ga)Se<sub>2</sub> solar cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006</s1></fA09><fA11 i1="01" i2="1"><s1>CAMPA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>KRC (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MALMSTRÖM (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>EDOFF (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>SMOLE (F.)</s1></fA11><fA11 i1="06" i2="1"><s1>TOPIC (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>TIWARI (A. N.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GUILLEMOLES (J.-F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHOCK (H.-W.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>NAKADA (T.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>NOUFI (R.)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>ABOU-RAS (D.)</s1><s9>ed.</s9></fA12><fA12 i1="07" i2="1"><s1>BREMAUD (D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>University of Ljubljana, Faculty of Electrical Engineering, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Uppsala University, Angstrom Solar Center, P.O. Box 534</s1><s2>75120 Uppsala</s2><s3>SWE</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Centre for Renewable Energy Systems Technology, Loughborough University</s1><s2>Loughborough, LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Institute of Research and Development on Photovoltaic Energy (UMR 7174, CNRS/EDF/ENSCP), 6 Quai Watier-BP 49</s1><s2>78401 Chatou</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Hahn-Meitner-Institut Berlin GmbH, Glienickerstrasse 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA15><fA15 i1="04"><s1>Department of Electric and Electronic Engineering Faculty of Engineering, Ehime University, 3 Bunkyo-cho</s1><s2>Matsuyama, Ehime 790-8577</s2><s3>JPN</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>National Renewable Energy Laboratory, 1617 Code Boulevard</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>5 aut.</sZ></fA15><fA15 i1="06"><s1>Thin Films Physics Group, Laboratory for Solid State Physics, ETH Zurich, Technopark, Technoparkstrasse 1</s1><s2>8005 Zurich</s2><s3>CHE</s3><sZ>7 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1><s2>67037 Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>5968-5972</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000149444260500</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>9 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0411320</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>The role of additionally textured front transparent conductive oxide - TCO (ZnO:Al) and flat TCO/metal contact on optical improvements in thin Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells are investigated by means of numerical simulations. A de-coupled analysis of two effects related to additional texturing of front surface of ZnO:Al TCO - (i) enhancement of light scattering and (ii) decreased total reflectance (antireflective effect) - reveals that the improvements in quantum efficiency, QE, and short-circuit current, J<sub>SC</sub>, of the solar cell originate from an antireflective effect only. In order to improve optical properties of the back contact the introduction of a TCO layer (undoped ZnO) between CIGS and back metal contact is investigated from the optical point of view. In addition to ZnO/Mo, a highly reflective ZnO/Ag contact (ZnO is also assumed to work as a protection layer for Ag) is also included in simulations. Results show significant increase in reflectance related to introduced ZnO in front of Mo. Drastically increased reflectance is obtained if ZnO/Mo is substituted with ZnO/Ag. The improvements in QE and J<sub>SC</sub> of a thin CIGS solar cell, related to ZnO/metal contacts are presented.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Absorption optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Optical absorption</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Absorción óptica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Solar cells</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Simulation numérique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Digital simulation</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffusion lumière</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Light scattering</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Facteur réflexion</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Reflectivity</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Rendement quantique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum yield</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété optique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Optical properties</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Argent</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Silver</s0><s2>NC</s2><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Modélisation</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Modelling</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etude théorique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Theoretical study</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Gallium séléniure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>267</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2006 Conference: Symposium O on Thin Film Chalcogenide Photovoltaic Materials</s1><s3>Nice FRA</s3><s4>2006-05-29</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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